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Old 04-17-2009, 08:41   #25 (permalink)
hasnain
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6610i flashed successfully

6610i flashed successfully

Code:
Booting UPP...
UPP ID: 1120 [HW_UPP8M_v2]
Flashbus Write baud set to 100Kbits
u_2nd.fia, Type: 2nd Boot Loader, Rev: 7.4.77.0, Algo: DCT4
PLL Factor: 1
FlashChip[0]: 0x00EC22F8 @ 0x01000000, Samsung, SectorSize: 64kB, Ext: 00007011
Signature: AD7EB61A1BBE0BE27D586BE4DBEE6514
Flashbus Write baud set to 1.0Mbits
Flashbus Read baud set to 4Kbits
u_amd.fia, Type: Algorithm, Target: FlashChip[0] 0x00EC22F8 (128Mbits), Rev: 7.4.77.0, Algo: DCT4 ALGORITHM
Nominal VPP Voltage: 9V, Detected: 0.07V 
Terminating flash session
Boot operation took 6.110s
Check Flashing Bus finished
Processing pre-flash tasks...
Pre-flash tasks finished
Booting UPP...
UPP ID: 1120 [HW_UPP8M_v2]
rm-3704.200, Type: Flash Image, Algo: DCT4, DCT4 ALGORITHM
Flashbus Write baud set to 100Kbits
u_2nd.fia, Type: 2nd Boot Loader, Rev: 7.4.77.0, Algo: DCT4
Box VPP disabled
Internal Phone VPP Selected
PLL Factor: 1
FlashChip[0]: 0x00EC22F8 @ 0x01000000, Samsung, SectorSize: 64kB, Ext: 00007011
Signature: AD7EB61A1BBE0BE27D586BE4DBEE6514
Flashbus Write baud set to 1.0Mbits
Flashbus Read baud set to 51Kbits
u_amd.fia, Type: Algorithm, Target: FlashChip[0] 0x00EC22F8 (128Mbits), Rev: 7.4.77.0, Algo: DCT4 ALGORITHM
Nominal VPP Voltage: 9V, Detected: 0.02V 
MSID-Crypted: 84521831D4EFF98575921C8D1A
MSID-Plain: 82A9BAE900D23D52A9000000
FAID-Crypted: CF91BA9C6A21458CFAFB6AC4
Flashbus Write baud set to 6.50Mbits
3 Region(s) to erase
Erasing NOR Region [0x01000000-0x0100FFFF]
Erasing NOR Region [0x01010000-0x017FFFFF]
Erasing NOR Region [0x01A00000-0x01FDFFFF]
Erase taken 131.281s
Writing 385 blocks...
All blocks written OK! Time taken 43.672s
Terminating flash session
Box VPP disabled
Booting UPP...
UPP ID: 1120 [HW_UPP8M_v2]
rm-3704.20.ucp_g, Type: Flash Image, Algo: DCT4, DCT4 ALGORITHM
Flashbus Write baud set to 100Kbits
u_2nd.fia, Type: 2nd Boot Loader, Rev: 7.4.77.0, Algo: DCT4
Box VPP disabled
Internal Phone VPP Selected
PLL Factor: 1
FlashChip[0]: 0x00EC22F8 @ 0x01000000, Samsung, SectorSize: 64kB, Ext: 00007011
Signature: AD7EB61A1BBE0BE27D586BE4DBEE6514
Flashbus Write baud set to 1.0Mbits
Flashbus Read baud set to 51Kbits
u_amd.fia, Type: Algorithm, Target: FlashChip[0] 0x00EC22F8 (128Mbits), Rev: 7.4.77.0, Algo: DCT4 ALGORITHM
Nominal VPP Voltage: 9V, Detected: 0.02V 
MSID-Crypted: 846B803F20D394D4BE786BA09C
MSID-Plain: 82A9BAE900D23D52AA000000
FAID-Crypted: 643551A29DA16BE454D7DF61
Flashbus Write baud set to 6.50Mbits
1 Region(s) to erase
Erasing NOR Region [0x01800000-0x019FFFFF]
Erase taken 19.328s
Writing 27 blocks...
All blocks written OK! Time taken 2.875s
Terminating flash session
Extracting Content Package...
CP Extract Failed -> CP Server not exists
WARNING: Failed to extract CP
Box VPP disabled
Booting UPP...
UPP ID: 1120 [HW_UPP8M_v2]
rm-3704.20g, Type: Flash Image, Algo: DCT4, DCT4 ALGORITHM
Flashbus Write baud set to 100Kbits
u_2nd.fia, Type: 2nd Boot Loader, Rev: 7.4.77.0, Algo: DCT4
Box VPP disabled
Internal Phone VPP Selected
PLL Factor: 1
FlashChip[0]: 0x00EC22F8 @ 0x01000000, Samsung, SectorSize: 64kB, Ext: 00007011
Signature: AD7EB61A1BBE0BE27D586BE4DBEE6514
Flashbus Write baud set to 1.0Mbits
Flashbus Read baud set to 51Kbits
u_amd.fia, Type: Algorithm, Target: FlashChip[0] 0x00EC22F8 (128Mbits), Rev: 7.4.77.0, Algo: DCT4 ALGORITHM
Nominal VPP Voltage: 9V, Detected: 0.04V 
MSID-Crypted: 846B803F20D394D4BE786BA09C
Using MSID-FAID Cache, Not wasting card
FAID-Crypted: 643551A29DA16BE454D7DF61
Flashbus Write baud set to 6.50Mbits
1 Region(s) to erase
Erasing NOR Region [0x01800000-0x019FFFFF]
Erase taken 19.78s
Writing 69 blocks...
All blocks written OK! Time taken 7.468s
Terminating flash session
Box VPP disabled
Processing post-flash tasks...
Setting Factory Defaults...
Factory defaults OK
Post-flash tasks finished...
Flash successfully finished!

Last edited by ptt; 01-17-2010 at 00:04. Reason: add code tag
 
 
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